Volume 125

1^st edition 2002, 180 pages, € 65,00. ISBN 3-89649-764-2

InP heterojunction bipolar transistors offer an unprecedented high-speed and high-power handling capability. This book offers a comprehensive study on some of the limitations of these devices imposed by device physics. Persistent assumptions originating from the analysis of silicon BJT are put into question, leading to the discovery that a III/V-device may be fast while the electrons are slow. The prerequisite for this to occur is velocity modulation, i.e., the bias dependence of the electron velocity. The importance of this effect is assessed experimentally as well as using Monte-Carlo simulations.
Base-pushout is shown to occur at unexpectedly low current densities without deteriorating but considerably modifying the high-speed characteristics as shown by a fully dynamic analysis that takes the slowness of the holes into account.
Marcel Rohner received his degree in electrical engineering from the Swiss Federal Institute of Technology (ETH) in Zuerich, in 1993. Since then he has been employed at ETH working in the area of semiconductor device modeling, Monte-Carlo device simulations, electro-optical sampling, digital filtering, and switched-current circuits.
Series in Microelectronics

Direkt bestellen bei / to order directly from: Hartung.Gorre@t-online.de