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Series in Microelectronics
edited by Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster
Volume 126
Bernhard Schmithüsen
Grid Adaptation
for the Stationary Two-Dimensional
Drift-Diffusion Model
in Semiconductor Device Simulation
1st edition 2002, 176 pages, € 64,00. ISBN 3-89649-773-1
In this dissertation a
novel anisotropic grid adaptation procedure for the stationary 2D
drift-diffusion model of semiconductor device simulation is developed.
The approach is based on the principle of 'equidistributing
local dissipation rate errors' and develops adaptation criteria in analogy to
standard a posteriori error estimation methods. A quad-tree mesh structure is
utilized to enable anisotropic local grid adaptation on boundary Delaunay
meshes. The iterative recomputation of solutions on
new simulation grids is discussed and both local smoothing and homotopy techniques are applied to improve the robustness
of the algorithm. The approach is analyzed for simple model device structures
and illustrated along realistic simulation cases.
Bernhard Schmithüsen was born in Aachen, Germany, on January 13, 1962. He studied
mathematics at the University of Technology (RWTH) Aachen where he received his
Dipl. Math. (M. Sc.) degree in 1988. In the following
years he worked as research assistant at the department of mathematics of the
Swiss Federal Institute of Technology (ETH) Zurich, Switzerland, and later as
CAD software developer. In 1994 he joined the TCAD development group at the
Integrated Systems Laboratory at ETH Zurich working on device simulation, and
joined later ISE Integrated Systems Engineering AG, Zurich. Since 1996 he is
again with the Integrated Systems Laboratory at ETH Zurich where he received
his Ph. D. degree in december
2001. His main research interests are numerical methods in device simulation.
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