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Series in Microelectronics
edited by Wolfgang Fichtner
George S. Moschytz
for the Stationary Two-Dimensional
in Semiconductor Device Simulation
1st edition 2002, 176 pages, € 64,00. ISBN 3-89649-773-1
In this dissertation a novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model of semiconductor device simulation is developed. The approach is based on the principle of 'equidistributing local dissipation rate errors' and develops adaptation criteria in analogy to standard a posteriori error estimation methods. A quad-tree mesh structure is utilized to enable anisotropic local grid adaptation on boundary Delaunay meshes. The iterative recomputation of solutions on new simulation grids is discussed and both local smoothing and homotopy techniques are applied to improve the robustness of the algorithm. The approach is analyzed for simple model device structures and illustrated along realistic simulation cases.
Bernhard Schmithüsen was born in Aachen, Germany, on January 13, 1962. He studied mathematics at the University of Technology (RWTH) Aachen where he received his Dipl. Math. (M. Sc.) degree in 1988. In the following years he worked as research assistant at the department of mathematics of the Swiss Federal Institute of Technology (ETH) Zurich, Switzerland, and later as CAD software developer. In 1994 he joined the TCAD development group at the Integrated Systems Laboratory at ETH Zurich working on device simulation, and joined later ISE Integrated Systems Engineering AG, Zurich. Since 1996 he is again with the Integrated Systems Laboratory at ETH Zurich where he received his Ph. D. degree in december 2001. His main research interests are numerical methods in device simulation.
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