Hartung-Gorre Verlag
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Renate Gorre D-78465
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Series in Microelectronics
edited by Wolfgang
Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster
Volume 128
Kai Esmark
Device Simulation of
ESD Protection Elements
1st edition 2002, XII, 148 pages, € 64,00. ISBN 3-89649-781-2
This thesis is about the investigation of ESD protection elements under
typical ESD stress situations by means of TCAD tools.
An ESD stress event is linked to high current densities and high
temperature distributions, as an enormous amount of energy is deposited in a
protection element on a very short time scale. On the one hand the focus of
this work is to uncover weak spots of the physical models implemented in the
device simulator with respect to their validity in the ESD relevant regime and
to provide a calibration strategy to prepare TCAD tools for ESD devices
simulation. On the other hand this work puts highlights on some very
fundamental ESD results gained from 2-D/3-D device simulation. The thesis
covers questions like "how to derive pre-Si ESD protection concepts?"
and "how to estimate device failure thresholds under TLP or HBM stressing
conditions as a consequence of thermal stress?" The part about 3-D device
simulation deals with important issues like reasons for "inhomogeneous
triggering" and "current filamentation".
Using the ggNMOS transistor as a test case,
this thesis definitely shows how to make device simulation a predictive tool
for ESD engineers to reduce and shorten development efforts and to understand
device specific behavior under ESD stress conditions.
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