Series in Microelectronics

edited by Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster

Vol. 131

Dieter Huber
InP/InGaAs Single Hetero-Junction Bipolar
Transistors for Integrated Photoreceivers
operating at 40 Gb/s and Beyond

2002, 222 pages. 64,00. ISBN 3-89649-800-2

InP is the material of choice for the monolithic integration of optics with fast electronics, an approach to respond to the steadily increasing demand for transmission bandwidth in fibre-optic links. One of the most advanced monolithic concepts is the co-integration of an InGaAs-photodetector with InP/InGaAs hetero-junction bipolar transistors (HBTs) to realize optical receiver front-ends. Covering all relevant aspects of optoelectronic receiver integration, this thesis comprehensively addresses receiver design, fabrication and characterization. Application-specific schemes for the optimization of the vertical transistor structure are discussed with particular consideration given to the trade-offs introduced by using shared layers for the fabrication of transistor and photodetector. A detailed description of the device fabrication process is given with emphasis on the reduction of device parasitics. Geometry dependent small signal models of both HBT and photodetector are developed and used to assess receiver performance by means of simulation.

Dieter Huber received his diploma degree in electrical engineering from the Swiss Federal Institute of Technology (ETH) in Zürich, in 1995. Since then he has been employed at the Electronics Laboratory of ETH as a research assistant. His research interests include device fabrication technology of InP based HBTs as well as design and characterization of optical receiver front-ends. He has authored and co-authored 15 scientific papers in international journals and conferences.

Series in Microelectronics

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