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Series in Microelectronics

edited by       Wolfgang Fichtner
                        Qiuting Huang
                        Heinz Jäckel
                        Hans Melchior
                        George S. Moschytz
                        Gerhard Tröster

Vol. 140

 

 

Fabian M. Bufler
Full-Band Monte Carlo Simulation of Nanoscale Strained-Silicon MOSFETs
2003, 88 pages. € 64,00. ISBN 3-89649-898-3

A full-band Monte Carlo simulator for the simulation of nanoscale MOSFETs has been developed and applied to state-of-the-art as well as to strained-Si devices. The simulator named SPARTA is based on a Single-PARTicle Approach to self-consistent Monte Carlo device simulation and was in June 2002 included in the release 8.0 of the technology computer-aided design (TCAD) company ISE Integrated Systems Engineering in Zürich.
It was found that the on-state in nanoscale strained-Si MOSFETs is influenced by quasi-ballistic transport which explains why - despite identical saturation velocities in unstrained and strained Si - the strain-induced performance enhancement does not vanish for decreasing gate lengths. The quasi-ballistic regime manifests itself in the 10 % difference of the simulated on-current between the <100> and the <110> channel orientation in strained-Si n-MOSFETs in view of a maximum anisotropy of the stationary in-plane electron velocity of only 4 % in strained bulk Si.

Fabian M. Bufler studied physics in Braunschweig, Grenoble and Aachen and received the Dipl.-Phys. degree in 1992 from the RWTH Aachen. He was a research and teaching assistant from 1992 to 1995 at the RWTH Aachen and from 1995 to 1997 at the University of Bremen where he received his Ph.D. degree with a thesis on ``Full-Band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe''. Since 1997 he has been with the Institut für Integrierte Systeme, ETH Zurich, working in the field of TCAD on Monte Carlo device modeling and transport theory.

Series in Microelectronics

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