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Series in Microelectronics
edited by Wolfgang Fichtner
George S. Moschytz
Simulation Approaches for Nanoscale Semiconductor Devices.
2004, 160 pages. € 64,00. ISBN 3-89649-910-6
Topic of this dissertation are the development and implementation of a three--dimensional simulation environment for semiconductor nanoelectronics devices, that are dominated by quantum effects, and the modelling of the properties of various candidate structures for future ultra--large scale integrated circuits.
In this context, Coulomb blockade in the presence of strong quantum confinement, quantum--ballistic transport and the effect of atomistic doping in aggressively scaled semiconductor devices have been studied. The simulation framework presented in this work extends the SIMNAD quantum mechanics simulator, that was developed at the Integrated Systems Laboratory in a previous project, and couples it to the standard device simulator DESSIS_ISE.
About the author
Frederik Heinz was born in Konstanz, Germany, on October 11, 1974. He studied physics at the Swiss Federal Institute of Technology (ETH) in Zürich. His studies were supported by the Studienstiftung des deutschen Volkes. In the academic year 1997/98 he attended Pembroke College, Cambridge (UK) with a scholarship by the Dr. Jürgen Ulderup foundation. In 2000 he received his Dipl. Phys. Degree from ETH Zürich. In the same year he joined the Integrated Systems Laboratory as a research and teaching assistant. The current focus of his work is on methods and algorithms for the simulation of nano--scale semiconductor devices. Previous projects comprised theoretical and computational topics as well as an extensive experimental study into the properties of metallic nano--particles.
German keywords: Halbleiter, Quantenmechanik, Coulombblockade, ballistischer Transport, kohärenter Transport, Nanoelektronik
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