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Series in Microelectronics
edited by Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster
Vol. 141
Frederik Heinz,
Simulation Approaches for Nanoscale Semiconductor Devices.
2004, 160 pages. € 64,00. ISBN 3-89649-910-6
Topic of this dissertation are the development and implementation of a
three--dimensional simulation environment for semiconductor nanoelectronics
devices, that are dominated by quantum effects, and the modelling of the
properties of various candidate structures for future ultra--large scale
integrated circuits.
In this context, Coulomb blockade in the presence of strong quantum
confinement, quantum--ballistic transport and the effect of atomistic doping in
aggressively scaled semiconductor devices have been studied. The simulation
framework presented in this work extends the SIMNAD quantum mechanics simulator, that was developed at the Integrated Systems
Laboratory in a previous project, and couples it to the standard device
simulator DESSIS_ISE.
About the author
Frederik Heinz was born in Konstanz, Germany, on October 11, 1974. He studied
physics at the Swiss Federal Institute of Technology (ETH) in Zürich. His
studies were supported by the Studienstiftung des deutschen Volkes. In the academic
year 1997/98 he attended Pembroke College, Cambridge (UK) with a scholarship by
the Dr. Jürgen Ulderup foundation. In 2000 he
received his Dipl. Phys. Degree from ETH Zürich. In the same year he joined the
Integrated Systems Laboratory as a research and teaching assistant. The current
focus of his work is on methods and algorithms for the simulation of nano--scale semiconductor devices. Previous projects
comprised theoretical and computational topics as well as an extensive
experimental study into the properties of metallic nano--particles.
German keywords:
Halbleiter, Quantenmechanik, Coulombblockade, ballistischer Transport,
kohärenter Transport, Nanoelektronik
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