Series in Microelectronics

edited by Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster

Vol. 147

Frank Geelhaar,
Coulomb Correlation Effects in Silicon Devices.
2004; 188 pages. € 64,00. ISBN 3-89649-941-6

Topic of this doctoral thesis are the correlation effects between the charge carriers in silicon devices which originate from the long-range Coulomb interaction. In the first part, the formation of bound states and the plasma-induced band gap narrowing are investigated in the framework of a many-body Green's function technique. The second part treats the ohmic transport in bipolar systems on the basis of the coupled linearised Boltzmann equations for the electrons and holes. The Chapman-Enskog method is employed to compute the minority and majority carrier mobilities, both in the Born and T-matrix approximations. Particular emphasis is laid on the influence of carrier-carrier scattering processes, and comparisons with experiment are performed.
Frank Geelhaar was born in Baden-Baden, Germany, on 21 August 1969. He studied physics at the University of Hamburg, Germany, where he received his Dipl.-Phys. (M.Sc.) degree in 1996. In the same year, he joined the School of Computer Science & Engineering and the Photovoltaics Special Research Centre at the University of New South Wales in Sydney, Australia, as a research assistant. From 1998 to 2004 he was a member of scientific staff in the Technology CAD Group of the Integrated Systems Laboratory at the Swiss Federal Institute of Technology Zurich, Switzerland. His research interests focus on numerical device simulation, semiconductor transport theory, and many-particle effects. Frank Geelhaar is a fellow of the Gottlieb Daimler- and Karl Benz-Foundation, Ladenburg, Germany.

Keywords (German):
TCAD, Halbleiterbauelementsimulation, Mobilitätsmodellierung, Coulomb-Wechselwirkung, Excitonen

Series in Microelectronics

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