Series in Microelectronics

edited by Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster

Vol. 155

This work is an investigation of the imaging and the quantitative doping profiling capabilities of Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM) for nanometer scale semiconductor devices. The quantification of the maximum achievable accuracy in the determination of doping profiles and in the delineation of the electrical junction has been assisted by two- and three-dimensional device simulation. A novel method based on SCM is proposed, representing an efficient alternative to the capacitance spectroscopy for the quantitative delineation of electrical junctions in bipolar samples. Progress has also been made in improving the accuracy of the conversion of SCM and SSRM profiles into the related local doping concentration. The comparison of the imaging performance of both techniques demonstrates the large degree of complementarity of SCM and SSRM.}

Maria Virginia Stangoni was born in Sassari, Italy, in 1972. She graduated in 2000 in Electronic Engineering at the University of Cagliari, Italy. In 2001 she joined the Integrated Systems Laboratory of the Swiss Federal Institute of Technology (ETH) in Zurich, where she received her Ph.D. degree in 2005. The main field of her research focused on high-resolution techniques for imaging and doping profiling of semiconductors, including physical device simulation, experimental measurements, and data quantification.}

Keywords: Doping profiling , physical characterization, scanning probe techniques, scanning capacitance microscopy, scanning spreading resistance microscopy, device simulation, junction delineation.