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Series in Microelectronics
edited by Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster
Iwan Schnyder,
An Indium-Phosphide Double-Heterojunction Bipolar
Transistor
Technology for 80 Gb/s Integrated Circuits
2005; 260 pages. € 64,00. ISBN 3-86628-000-9
Indium-phosphide double-heterojunction bipolar
transistors (InP DHBTs) belong to the fastest
transistor technologies today. The combination of excellent electron transport
properties, low thermal resistivity, high breakdown voltages and modest
lithography requirements makes InP DHBTs an optimal
choice for state-of-the-art ultra-high-speed applications such as driver
circuits.
In this work we present the development of an InP
DHBT technology for 80 Gb/s circuits. This includes
the design, fabrication, characterization and modeling of the DHBTs and the
analysis, design, implementation and characterization of the 80Gb/s
large-signal circuits.
Iwan Schnyder received the Dipl.-Ing. (MSc) and Dr. sc. techn. (PhD) degrees in
information technology and electrical engineering from the Swiss Federal
Institute of Technology (ETH), Zurich, Switzerland, in 1998 and 2005,
respectively. He joined the Electronics Laboratory at ETH Zurich in 1998 as a
research and teaching assistant in the InP
HBT Group. His research interests include processing, characterization and
small- and large-signal modeling of InP DHBTs and InP DHBT circuit design.
Keywords:
Indium-Phosphide Double-Heterojunction Bipolar Transistor Technology, InP DHBT, InP/InGaAsP
Processing, HBT Modeling, 80 Gb/s Integrated Circuits, 80 Gb/s Driver
Circuits,80 Gb/s Multiplexer
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