Series in Microelectronics
Dopant Imaging and Profiling of
Wide Bandgap Semiconductor Devices.
2007; 160 pages. € 64,00. ISBN 3-86628-124-2
Silicon technology has difficulty meeting the demand for some high power
applications as a result of limitations in its intrinsic material properties.
The superior electrical characteristics of wide-band-gap semiconductors
motivate the development of new technological solutions. In this framework the
analysis of dopant distribution has a strategic relevance since reliable model
for simulations are not available.
This dissertation investigates Scanning Capacitance Microscopy, the standard technique for dopant profiling, presenting some cutting-edge applications and its limitations. Based on this a new approach to for dopant imaging and profiling is proposed, the Secondary Electron Potential Contrast. This work explores the physics behind of the method, identifies the sample preparation issues, proposes targeted solutions, and reviews several case studies involving test structures and prototype devices.
About the Author:
Marco Buzzo received his M.Sc. degree in Electronic Engineering from the University of Cagliari, Italy, in 2002.He joined the Integrated Systems Laboratory at the ETH Zurich in 2003, working as external researcher in Infineon Technologies Austria. His work has been focused on the characterization of power devices, aimed to the technology development and the failure analysis.
Keywords: Wide bandgap Halbleiter, Rasterkapazitätsmikroskop, Rasterelektronenmikroskop, Sekundärelektronpotentialkontrast, Siliziumkarbid, Quantum Well, Laser, Probenpräparation, Leistungshalbleiter, Sperrschicht
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