Inh.: Dr. Renate Gorre
Fon: +49 (0)7533 97227
Fax: +49 (0)7533 97228
Series in Microelectronics
edited by Wolfgang
Ab Initio Molecular Dynamics Simulation of Diffusion in Silicon.
2007, VIII, 198 pages. € 64,00. ISBN 3-86628-133-1
Diffusion of self-interstitials
and vacancies in silicon plays an important role in thermal processes during
integrated circuit manufacturing. The diffusion coefficients are key parameters
for the understanding and for the simulation of these processes, but they are
very hard to determine experimentally. This thesis describes the investigation
of the diffusion of the self-interstitial and the vacancy in the neutral charge
state by means of ab initio molecular dynamics simulations. The simulation data
was analyzed in detail with newly developed methods specifically aimed at the
investigation of point defect diffusion in crystalline solids. The diffusion
coefficients were calculated at several temperatures, and the prefactors and
migration energies were obtained from Arrhenius fits. The tracer correlation
factor was calculated. Well defined and quantitative information on the defect
configurations and the diffusion mechanisms was also extracted.
About the author:
Beat Sahli was born in 1975 in Berne, Switzerland. He studied physics at the University of Berne, where he received his Dipl. Phys. degree in 2000. In the same year, he joined the Integrated Systems Laboratory at ETH Zurich as a research and teaching assistant. He has been working in the field of atomic scale simulation of dopant diffusion and activation. The main focus of his research has been ab initio molecular dynamics simulation of diffusion in silicon.
Keywords: Diffusion, Silicon
Direkt bestellen bei / to order directly from: Hartung.Gorre@t-online.de