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Series in Microelectronics
edited by Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Gerhard Tröster
Bernd Witzigmann
Ulrich Glaser,
Complex ESD
Protection Elements and Issues
in Decananometre CMOS Technologies.
2007, € 64,00. ISBN 3-86628-135-8
This work comprises several investigations into
complex electrostatic discharge (ESD) protection elements and issues in
decananometre p-substrate CMOS technologies. Calibrated TCAD device simulation
constitutes the mainly used tool. Special attention is given to parasitic and
inherent devices.
A relevant failure mode, the opening of a critical ESD
path via parasitic npn transistors is analysed. Several solutions on the device
and circuit level are developed. Two essential ESD protection devices,
p+/n-well diode strings and thyristors (SCRs) are studied.
The discovery of parasitic SCRs necessitates the
extension of the equivalent circuit model of the diode string. Three
dimensional ESD simulations of an SCR ESD protection device exhibit current
confinement. The rigorous analysis of the transient response of both protection
devices leads to their optimisation regarding speed and clamping capabilities.
Keywords:
Complex ESD Protection Elements, Decananometre CMOS Technologies
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