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Series in Microelectronics
edited by Wolfgang
Fichtner
Qiuting Huang
Heinz Jäckel
Gerhard Tröster
Bernd Witzigmann
Urs Hammer
Sub-micron InP/GaAsSb/InP Double Heterojunction
Bipolar
Transistors for Ultra High-Speed Digital Integrated Circuits.
2010, X, 268 pages, € 64,00.
ISBN 978-3-86628-301-5
Abstract:
Indium phosphide (InP) based
double heterojunction bipolar transistors (DHBT) have demonstrated excellent
high-speed characteristics. Ultimate performance of digital integrated
circuits, however, will depend on aggressively scaled device technologies and
appropriate material systems. In this work the high potential of InP based DHBTs with a GaAsSb base is recognized. Guidelines for DHBT device
scaling towards 160Gb/s and beyond digital integrated
circuits are presented and an InP/GaAsSb/InP DHBT technology based on two-inch substrates is
developed. Sub-micron DHBT device scaling is achieved by means of a two-level electron beam lithography (EBL) process. This
thesis provides a thorough insight into the design, fabrication and
characterization of sub-micron InP/GaAsSb/InP DHBTs as well as the
design of ultra high-speed static frequency dividers.
About the
author
Urs Hammer received the Dipl. Ing. (MSc) and PhD degrees in Electrical Engineering from ETH Zurich in
2002 and 2009, respectively. Since 2002 he has been a research and
teaching assistant with the Electronics Laboratory of ETH Zurich. His work
focuses on the design, fabrication and characterization of InP based DHBTs and ultra high-speed digital
integrated circuits.
Keywords: Indium Phosphide, Antimonide,
InP/GaAsSb, Double
Heterojunction, Bipolar Transistor, DHBT, Sub-micron, Electron Beam
Lithography, EBL, Ultra High-Speed, Digital Integrated Circuits, Static
Frequency Divider.
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