Series in Microelectronics
Scattering in Nanoscale Devices.
2010. X, 140 pages. ISBN 3-86628-353-9, 978-3-86628-353-4
In this thesis electronic transport through nanoscale devices is modeled by means of quantum physics. Moving from ballistic transport towards a detailed description of electron-phonon scattering, the used formalism changes from wave functions to the non-equilibrium Green’s functions (NEGF). The impact of electron-phonon scattering on the device characteristics is investigated together with new boundary conditions for the quantum transport equations. The mobility and the conductivity are studied as a function of the confinement and doping concentration.
About the Author
Martin Frey was born in Reinach BL, Switzerland, on January 27, 1981. He studied physics at the Swiss Federal Institute of Technology (ETH) in Z¨urich, receiving his Dipl. Phys. Degree in Spring 2005. In the same year he joined the Integrated Systems Laboratory (IIS) at ETH as a research and teaching assistant. The focus of his work is on the modeling of scattering within quantum transport theory, the study of boundary conditions and numerical device simulations.
Keywords: Quantum Transport, Tunneling, NEGF, Ballistic Transport, Silicon Nanowire, Mosfet, Phonon Scattering, Boundary Conditions.
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