Series in Microelectronics
edited by
Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Gerhard Tröster
Bernd Witzigmann
Martin Frey,
Scattering
in Nanoscale Devices.
2010. X, 140 pages. ISBN 3-86628-353-9,
978-3-86628-353-4
Abstract:
In this thesis electronic transport through nanoscale devices is modeled
by means of quantum physics. Moving from ballistic transport towards a detailed
description of electron-phonon scattering, the used formalism changes from wave
functions to the non-equilibrium Green’s functions (NEGF). The impact of electron-phonon
scattering on the device characteristics is investigated together with new
boundary conditions for the quantum transport equations. The mobility and the
conductivity are studied as a function of the confinement and doping
concentration.
About the Author
Martin Frey
was born in Reinach BL, Switzerland, on January 27, 1981. He studied physics at
the Swiss Federal Institute of Technology (ETH) in Z¨urich, receiving his Dipl.
Phys. Degree in Spring 2005. In the same year he joined the Integrated Systems
Laboratory (IIS) at ETH as a research and teaching assistant. The focus of his
work is on the modeling of scattering within quantum transport theory, the
study of boundary conditions and numerical device simulations.
Keywords: Quantum Transport, Tunneling,
NEGF, Ballistic Transport, Silicon Nanowire, Mosfet, Phonon Scattering,
Boundary Conditions.
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