Series in Microelectronics
edited by
Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Gerhard Tröster
Bernd Witzigmann
Kilian Vollenweider,
Dopant Clustering and Diffusion in Silicon.
2010. XII, 90 pages. ISBN 3-86628-354-7,
978-3-86628-354-1
Abstract:
In this dissertation the clustering and diffusion of dopants and
codopants in silicon were studied with density functional based simulations. The
investigations focused on three topics for which the following results were
elaborated.
Point defect clusters with phosphorus, arsenic
and antimony were examined, including mixed clusters. It was shown that these dopant
species interact, modifying their diffusion and activation. Most importantly,
mixed clusters can exist in similar concentrations as pure clusters, reducing
the fraction of active dopants.
Among the mobile fluorine defects FV2, FV, F and
FI, the extra fluorine atom (F) was found to dominate diffusion. In p-type
silicon it was neutral and in n-type silicon it was negatively charged. During
migration of both, F0 and F-, the fluorine atom moved
from one bond-centered configuration into a neighboring one.
Arsenic diffusion was investigated in uniaxially
stressed silicon. At a temperature of 10000 C, the diffusion of the most prevalent As
vacancy pair (AsV) was found to be strongly increased in compressively strained
silicon and unchanged under tensile strain.
About the Author
Kilian
Vollenweider was born in M¨annedorf, Switzerland, on January
23, 1982. He studied Physics at the Swiss Federal Institute of Technology (ETH)
in Z¨ urich and received his master degree in 2006. In 2007 he joined the
Integrated Systems Laboratory (IIS) at ETH as a research and teaching
assistant, where he worked in the field of density functional theory based
ab-initio simulations. The focus of his study was on dopant clustering and
diffusion in silicon.
Keywords: Dopant,
Defect, Silicon, Diffusion, ab-initio.
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