Series in Microelectronics
Band Structure Effects
and Quantum Transport.
2011. X, 194 pages. ISBN 3-86628-378-4
Topic of this thesis is the development and extension of quantum transport simulators for the modeling of nanowire and planar field effect transistors (FETs) at the nanometer scale, as well as the investigation of band structure effects by various atomistic methods in order to improve the effective mass approximation (EMA) used by the present simulators. In this context, nonparabolicity (NP) models have been developped and validated by means of detailed comparisons with a full-band tight-binding quantum transport simulator. Inelastic scattering processes and NP have been taken simultaneously into account for the simulation of nanowire FETs in the final part of the work.
About the Author:
Aniello Esposito was born in Z¨ urich, Switzerland, on August 06, 1979. He studied physics at the Swiss Federal Institute of Technology (ETH) Z¨ urich with a focus on computational methods for condensed matter physics and received his Dipl. Phys. Degree in Spring 2005. Topic of his diploma thesis was the investigation of Fermions in optical lattices. In 2005 he joined the Integrated Systems Laboratory, ETHZ, as a research and teaching assistant in the Technology CAD group. His research interests comprise the band structure calculation and the simulation of quantum transport in nanoscale devices as well as the implementation of related algorithms on high performance compute clusters. In his spare time he enjoys riding motorcycles.
Keywords: Quantum Transport, Nanowire, Finite Element Method, Nonparabolicity, Pseudopotentials, Tight-Binding
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