Series in Microelectronics
Design, Characterization and
Simulation of Avalanche Photodiodes.
2011. VIII, 180 pages. ISBN 3-86628-380-6
Two mesa InAlAs/InGaAs separated absorption, charge and multiplication (SACM) avalanche photodiodes (APDs) for next generation 10 Gbit/s fiber-to-the-home (FTTH) passive optical networks (PON) are designed, characterized and analyzed. Furthermore, a 25 Gbit/s APD prototype is presented.
The analysis of the device performance is supported by the simulation of carrier transport within the APD in presence of fast changing, high electric fields and transport across hetero-junction band diagram energy offsets. For this purpose, a transport simulator based on the Monte Carlo (MC) method is implemented. The band structure is represented by a spherical, non-parabolic approximation with three conduction band and three valence band valleys. The simulation results show good agreement with measurements and give insight to performance critical physics, such as carrier velocity overshoots and non-local impact ionization. The simulator allows a quantitative design optimization of future APD devices.
About the Author:
Hektor Meier was born in Lucerne, Switzerland, on April 6, 1981. From 2001 to 2006 he studied electrical engineering at the Swiss Federal Institute of Technology (ETH) Zurich. He received his Dipl. El.-Ing. ETH (MSc ETH) in 2006. In the same year he joined the Integrated Systems Laboratory, ETH Zurich, as research assistant in the the computational optoelectronics group. His re- search focus on the numerical simulation of non-equilibrium car- rier transport and the design of next-generation avalanche photo- diodes.
Keywords: photodiode, avalanche multiplication, non-local impact ionization, non-equilibrium carrier transport, gain-bandwidth product, hetero junction, Monte Carlo, simulation
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