Series in Microelectronics
edited by
Qiuting
Huang
Andreas Schenk
Mathieu Maurice Luisier
Bernd
Witzigmann
Artur
Scheinemann,
Modelling of Leakage Currents
Induced by
Extended Defects in
Extra-Functionality Devices
2014. XIV, 124 pages. € 64.00.
ISBN 978-3-86628-504-0
Abstract:
Topic of the presented thesis is the development of a Deep Level Transient
Spectroscopy (DLTS) simulator combining the convenient state-of-the-art
computation of electrostatics in devices with the flexibility of a completely
independent C++ - code, to validate and test the implications of different
models for the capture and emission of electrons and holes to a defect state.
Conclusions about the electrical nature of defects obtained fram
the comparison of DLTS simulations and measurements can subsequently be used to
refine the simulation of leakage currents.
About
the Author
Artur Scheinemann
was born in Sokuluk (USSR) in 1983. He studied
physics at the Johannes Gutenberg University (Mainz, Germany) beginning fram 2004. In 2010 he finished his diploma thesis. Primary
goal of his thesis was the generic optimization of data analysis, development
of data compression models and optimization of neural networks for the automatization of data analysis. In 2010 he started the PhD
pragram at ETH Zurich in the Integrated
Systems Laboratory. The emphasis of his research work lies in extended defects,
their characterization by Deep Level Transient Spectrascopy
and their impact on leakage current in semiconductor technology.
Keywords: Deep Level Transient
Spectroscopy, DLTS, Leakage Currents, Extra-Functionality Devices
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