Series in Microelectronics

edited by Qiuting Huang

Andreas Schenk

Mathieu Maurice Luisier

Bernd Witzigmann

Vol. 224

 

 

 

 

 

 

 

Artur Scheinemann,

Modelling of Leakage Currents Induced by

Extended Defects in Extra-Functionality Devices

2014. XIV, 124 pages. 64.00.

ISBN 978-3-86628-504-0

 

 

 

 

 

 

 

 

 

 

 

Abstract:

Topic of the presented thesis is the development of a Deep Level Transient Spectroscopy (DLTS) simulator combining the convenient state-of-the-art computation of electrostatics in devices with the flexibility of a completely independent C++ - code, to validate and test the implications of different models for the capture and emission of electrons and holes to a defect state. Conclusions about the electrical nature of defects obtained fram the comparison of DLTS simulations and measurements can subsequently be used to refine the simulation of leakage currents.

 

About the Author

 

Artur Scheinemann was born in Sokuluk (USSR) in 1983. He studied physics at the Johannes Gutenberg University (Mainz, Germany) beginning fram 2004. In 2010 he finished his diploma thesis. Primary goal of his thesis was the generic optimization of data analysis, development of data compression models and optimization of neural networks for the automatization of data analysis. In 2010 he started the PhD pragram at ETH Zurich in the Integrated Systems Laboratory. The emphasis of his research work lies in extended defects, their characterization by Deep Level Transient Spectrascopy and their impact on leakage current in semiconductor technology.

 

Keywords: Deep Level Transient Spectroscopy, DLTS, Leakage Currents, Extra-Functionality Devices

 


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