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Scientific Reports on Micro and Nanosystems
edited by Christofer Hierold
Vol. 34
Ian Aleksander Mihailovic
Ag/BiSe memristors
for sensor
data storage: a novel
concept
for zero-power sense-log
devices
1st Edition 2022. XX, 146 pages. € 64,00.
ISBN 978-3-86628-769-3
Abstract
This thesis presents
sense-log devices, a novel type of zero-power logging sensor. Sense-log devices
aim to bridge the gap between existing sensing solutions in the form of loggers
with sampling circuits and non-reusable chemical indicators. They employ
non-volatile resistive switching to store information about a change of an
external quantity. The devices are reusable, do not
require battery power and oer electronic read-out of
the sensed value. Here, the aim is to use thermoelectric conversion to provide
information about external heat-ux changes and store
it in a memristor that can be read and reset after
the sensed event. The main focus of this work are
fabrication and characterization of memristors and
the concepts for connecting them in a joint heat-ux
sensing sense-log device. Based on the state of the art, bismuth selenide was
selected to perform both memristive and
thermoelectric functions. A bottom-up fabrication path using microfabrication
and electrochemical deposition is presented, resulting in compact deposits
suitable for use as device pillars. Changing the electrodeposition method to galvanodynamic pulses resulted in ner
control of the stoichiometry, while variations in electrolyte concentrations
and additives resulted in both orthorhombic, as well as mixed
orthorhombic/rhombohedral crystallinity. Previously not reported with
electrodeposited bismuth selenide, the memristors
display a clear hysteresis in combination with a silver top electrode. The low switching voltages of 100 mV and 24 hour non-volatile retention
of resistance show promising potential for storing information from converted
thermal energy. Analysis of the current-voltage sweeps points towards Schottky and space-charge-limited current transport
regimes, while geometrical scaling and top electrode investigations imply
interface-type valence change mechanisms. Integration aspects towards a joint
sense-log device are discussed, as well as the electrochemical tuning of memristors for a reduction of process ow steps and higher
overall resistance ranges. A demonstration of resistive switching triggered
directly by the voltage from a commercial thermoelectric generator conrm the suitability of the presented memristive
devices. The outlook presents further possibilities for improving the memristive devices and expanding the sense-log concepts.
Keywords:
Scientific Reports on Micro and Nanosystems
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