Series in Quantum Electronics
edited by
Henry Baltes, Peter Günter, Ursula Keller,
Fritz K. Kneubühl †, Walter Lukosz,
Hans Melchior, Markus W. Sigrist
Vol. 40
Olivier Ostinelli,
Long Wavelength VCSELs with MOVPE
Grown
AlGaAsSb/InP Bragg Reflectors
1st edition 2006. viii,
148 pages; € 64,00. ISBN 3-86628-108-0
In the last
decades a large fraction of copper cables for data communication have been replaced
by optical glass fibers. The optical links offer a larger bandwidth capacity, a
reduced weight and absence of electromagnetic interferences. Suitable optical
sources for long distance data transmission would be long wavelength
vertical-cavity surfaceemitting lasers (LW-VCSELs) with emission wavelengths
where the silica-based fibers show a minimum of absorption, i.e. at 1.55 μm. This thesis focuses on the fabrication of InP
based LW-VCSELs composed by a bottom AlGaAsSb/InP distributed Bragg reflector
(DBR), an InP cavity with three InP/InGaAs multiple quantum wells and InGaAsP/InP
and SiO2/SiOx top DBRs. The challenge in this work is the development of
the metal-organic vapor-phase epitaxy (MOVPE) growth of the AlGaAsSb/InP DBR. The
VCSEL design and the choice of MOVPE for the growth should allow low costs and high
volume production in industry.
Olivier Ostinelli was born in Lugano, Switzerland, in February 1975. He received the M.S. degree in physics from the
Swiss Federal Institute of Technology Zurich (ETHZ) in 2000. He carried out his
master’s thesis at the Institute of Quantum Electronics, Department of Physics.
His research focused on the experimental characterization and investigation of
the nonlinear properties of organic molecules incorporated in polymer films for
electro-optic modulator applications. Between 2000 and 2001 he worked as a process
engineer at Avalon Photonics Ltd. for the characterization of VCSELs with emission
wavelength at 0.85 μm. Between 2002
and 2006 he worked at ETHZ and Avalon Photonics Ltd. as a research assistant on
the development of a VCSEL at the emission wavelength 1.55 μm for long distance data communication. He has
been involved with the crystal growth, characterization of III-V semiconductor
alloys, VCSEL design and fabrication process.
Keywords: Infrared Laser, Long
Wavelength Vertical-Cavity Surface-Emitting Laser (Long Wavelength VCSEL), III-V
Semiconductors, Heterostructure and Interface, AlGaAsSb, InP, Metal-Organic
Vapor-Phase Epitaxy (MOVPE), Distributed
Bragg Reflector (DBR), Photoluminescence, Crystal Growth
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