Series in Quantum Electronics
Henry Baltes, Peter Günter, Ursula Keller,
Fritz K. Kneubühl †, Walter Lukosz,
Hans Melchior, Markus W. Sigrist
Long Wavelength VCSELs with MOVPE Grown
AlGaAsSb/InP Bragg Reflectors
1st edition 2006. viii, 148 pages; € 64,00. ISBN 3-86628-108-0
In the last decades a large fraction of copper cables for data communication have been replaced by optical glass fibers. The optical links offer a larger bandwidth capacity, a reduced weight and absence of electromagnetic interferences. Suitable optical sources for long distance data transmission would be long wavelength vertical-cavity surfaceemitting lasers (LW-VCSELs) with emission wavelengths where the silica-based fibers show a minimum of absorption, i.e. at 1.55 μm. This thesis focuses on the fabrication of InP based LW-VCSELs composed by a bottom AlGaAsSb/InP distributed Bragg reflector (DBR), an InP cavity with three InP/InGaAs multiple quantum wells and InGaAsP/InP and SiO2/SiOx top DBRs. The challenge in this work is the development of the metal-organic vapor-phase epitaxy (MOVPE) growth of the AlGaAsSb/InP DBR. The VCSEL design and the choice of MOVPE for the growth should allow low costs and high volume production in industry.
Olivier Ostinelli was born in Lugano, Switzerland, in February 1975. He received the M.S. degree in physics from the Swiss Federal Institute of Technology Zurich (ETHZ) in 2000. He carried out his master’s thesis at the Institute of Quantum Electronics, Department of Physics. His research focused on the experimental characterization and investigation of the nonlinear properties of organic molecules incorporated in polymer films for electro-optic modulator applications. Between 2000 and 2001 he worked as a process engineer at Avalon Photonics Ltd. for the characterization of VCSELs with emission wavelength at 0.85 μm. Between 2002 and 2006 he worked at ETHZ and Avalon Photonics Ltd. as a research assistant on the development of a VCSEL at the emission wavelength 1.55 μm for long distance data communication. He has been involved with the crystal growth, characterization of III-V semiconductor alloys, VCSEL design and fabrication process.
Keywords: Infrared Laser, Long Wavelength Vertical-Cavity Surface-Emitting Laser (Long Wavelength VCSEL), III-V Semiconductors, Heterostructure and Interface, AlGaAsSb, InP, Metal-Organic Vapor-Phase Epitaxy (MOVPE), Distributed Bragg Reflector (DBR), Photoluminescence, Crystal Growth
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